Monolithic 626 nm single-mode AlGaInP DBR diode laser.

Area of Science:

• Semiconductor diode lasers
• Optoelectronics
• Photonics

Background:

• Achieving single-mode laser emission below 630 nm typically requires complex optical setups.
• Miniaturization of laser systems is crucial for advancing fields like quantum information processing.

Purpose of the Study:

• To develop a compact, monolithic diode laser capable of single-mode emission at wavelengths below 630 nm.
• To demonstrate the potential of AlGaInP-based distributed Bragg reflector ridge waveguide lasers (DBR-RWL) for simplifying existing laser systems.

Main Methods:

• Fabrication of AlGaInP-based ridge waveguide lasers (RWL) incorporating distributed Bragg reflectors (DBR).
• Packaging of DBR-RWL into sealed TO-3 housings.
• Internal cooling of packaged lasers to approximately 0°C.

Main Results:

• Emission of over 50 mW output power at a wavelength of 626.0 nm.
• Achieved nearly diffraction-limited, single longitudinal mode output.
• Demonstrated a spectral width below 1 MHz.

Conclusions:

• The developed DBR-RWL represent a significant advancement in compact, single-mode laser technology below 630 nm.
• These monolithic diode lasers offer a pathway to drastically miniaturize complex optical setups, particularly for quantum information processing applications.