Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.8K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.8K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
MOSFET Amplifiers01:17

MOSFET Amplifiers

787
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
787
MOSFET01:16

MOSFET

1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.8K
Bulk Modulus01:21

Bulk Modulus

1.0K
The bulk modulus is a scientific term used to describe a material's resistance to uniform compression. It is the proportionality constant that links a change in pressure to the resulting relative volume change.
1.0K
MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Single-cell RNA sequencing reveals immune-peritubular myoid cell crosstalk driving testicular interstitial fibrosis in idiopathic non-obstructive azoospermia.

Cell & bioscience·2026
Same author

A chromosome-level genome assembly of the chemosymbiotic species Rugalucina vietnamica (Lucinida: Lucinidae).

Scientific data·2026
Same author

Using station-pair to elucidate the cooling effect of vegetation in megacities.

Scientific reports·2026
Same author

Anti-diabetic retinopathy molecular mechanism of Dihuang Yinzi: insights from network pharmacology, metabolomics, and microbiome analysis.

Frontiers in medicine·2026
Same author

Nanoparticle Delivery Systems in Rheumatoid Arthritis: More Than Vehicles.

Sichuan da xue xue bao. Yi xue ban = Journal of Sichuan University. Medical science edition·2026
Same author

[Characterization of Immune Reconstitution Patterns in B-cell Subsets Mediated by B-cell Targeted Therapies].

Sichuan da xue xue bao. Yi xue ban = Journal of Sichuan University. Medical science edition·2026
Same journal

Denoising algorithm of Φ-OTDR systems based on adaptive fractional wavelet transform denoising.

Optics express·2026
Same journal

Millisecond photon-to-photon latency and high-speed volumetric projection system for optogenetics.

Optics express·2026
Same journal

Polarization-encoded coaxial structured light for high-precision 3D surface profilometry.

Optics express·2026
Same journal

Discrete freeform optical design based on collaborative optimization of point cloud and local normals.

Optics express·2026
Same journal

Ultrafast ghost imaging with 25 GHz speckle switching and wavelength-division multiplexing.

Optics express·2026
Same journal

Atomic vapor cells fabricated by femtosecond laser welding of standard-optical-quality glass.

Optics express·2026
See all related articles

Related Experiment Video

Updated: May 7, 2026

Quasi-light Storage for Optical Data Packets
07:45

Quasi-light Storage for Optical Data Packets

Published on: February 6, 2014

10.1K

Low-voltage, high speed, compact silicon modulator for BPSK modulation.

Tiantian Li, Junlong Zhang, Huaxiang Yi

    Optics Express
    |October 10, 2013
    PubMed
    Summary
    This summary is machine-generated.

    A novel silicon Mach-Zehnder Interferometer modulator achieves high-speed Binary Phase Shift Keying (BPSK) modulation at low voltage and power consumption. This compact device is ideal for advanced, energy-efficient communication systems.

    More Related Videos

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    18.0K
    Characterization of Anisotropic Leaky Mode Modulators for Holovideo
    09:36

    Characterization of Anisotropic Leaky Mode Modulators for Holovideo

    Published on: March 19, 2016

    7.6K

    Related Experiment Videos

    Last Updated: May 7, 2026

    Quasi-light Storage for Optical Data Packets
    07:45

    Quasi-light Storage for Optical Data Packets

    Published on: February 6, 2014

    10.1K
    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    18.0K
    Characterization of Anisotropic Leaky Mode Modulators for Holovideo
    09:36

    Characterization of Anisotropic Leaky Mode Modulators for Holovideo

    Published on: March 19, 2016

    7.6K

    Area of Science:

    • Photonics
    • Integrated Optics
    • Semiconductor Devices

    Background:

    • Silicon photonics enables compact and efficient optical modulators.
    • Mach-Zehnder Interferometer (MZI) modulators are key components in optical communication systems.
    • Binary Phase Shift Keying (BPSK) is a widely used modulation format.

    Purpose of the Study:

    • To demonstrate a low-voltage, high-speed silicon MZI modulator for BPSK modulation.
    • To achieve high modulation efficiency and low power consumption.
    • To assess the suitability of the modulator for advanced communication systems.

    Main Methods:

    • Fabrication of a compact silicon MZI modulator with a 1mm length.
    • Utilized higher doping concentration and a low-loss traveling-wave electrode.
    • Tested BPSK modulation at various data rates (10 Gb/s and 25 Gb/s) and driving voltages.

    Main Results:

    • Achieved high modulation efficiency with VπLπ = 0.45V·cm.
    • Demonstrated 25 Gb/s non-return-to-zero (NRZ)-BPSK with a 6Vpp RF driving signal.
    • Realized 10 Gb/s NRZ-BPSK with a low 3Vpp RF driving signal.
    • Obtained low power consumption of 0.118 W for BPSK modulation.

    Conclusions:

    • The demonstrated silicon MZI modulator offers high performance in terms of speed, efficiency, and low voltage operation.
    • The device exhibits excellent potential for advanced optical communication systems requiring low power consumption.
    • This silicon modulator represents a significant advancement for energy-efficient data transmission.