SiOC thin films: an efficient light source and an ideal host matrix for Eu2+ ions

Area of Science:

• Materials Science
• Solid State Physics
• Luminescence

Background:

• Silicon oxycarbide (SiOC) layers possess intrinsic luminescence.
• SiOC is explored as a host matrix for rare-earth elements.
• Optical properties of SiOC depend on thermal processing.

Purpose of the Study:

• To investigate the luminescence of SiOC layers.
• To elucidate the effect of thermal annealing on SiOC luminescence.
• To evaluate Eu-doped SiOC as a luminescent material.

Main Methods:

• Thermal annealing of SiOC layers.
• Incorporation of Europium (Eu) ions into the SiOC matrix.
• Photoluminescence spectroscopy to analyze emission properties.

Main Results:

• SiOC layers exhibit intense luminescence, tunable by thermal annealing.
• Europium ions (Eu3+) are reduced to Eu2+ in the SiOC matrix.
• Eu-doped SiOC shows strong visible luminescence peaked at 440 nm.
• An energy transfer mechanism enhances Eu2+ excitation efficiency.
• Eu doping enhances luminescence intensity by a factor of approximately 15.

Conclusions:

• Eu-doped SiOC is a promising material for photonic and lighting technologies.
• The matrix-mediated energy transfer significantly boosts luminescence.
• SiOC offers a robust host for optically active ions.