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Updated: May 7, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Structural and magnetic properties of 3d transition-metal-atom adsorption on perfect and defective graphene: a
Tingting Zhang1, Liyan Zhu, Shijun Yuan
1Department of Physics, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 211189 (PR China).
Abstract:
We systematically investigate the interactions and magnetic properties of a series of 3d transition-metal (TM; Sc-Ni) atoms adsorbed on perfect graphene (G6), and on defective graphene with a single pentagon (G5), a single heptagon (G7), or a pentagon-heptagon pair (G57) by means of spin-polarized density functional calculations. The TM atoms tend to adsorb at hollow sites of the perfect and defective graphene, except for G6Cr, G5Cr, and G5Ni. The binding energies of TMs on defective graphene are remarkably enhanced and show a V-shape, with G(N)Cr and G(N)Mn having the lowest binding energies. Furthermore, complicated element- and defect-dependent magnetic behavior is observed in G(N)TM. Particularly, the magnetic moments of G(N)TM linearly increase by about 1 μB and follow a hierarchy of G7TM
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