Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

921
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
921
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K
Series Resonance01:17

Series Resonance

1.1K
The RLC circuit impedance is defined as the ratio of the supply voltage to the circuit current. Resonance in such a circuit occurs when the imaginary part of this impedance equals zero. This specific condition means that the inductive reactance is exactly equal to the capacitive reactance. The frequency at which this happens is known as the resonant frequency. Mathematically, the resonant frequency is inversely proportional to the square root of the product of the inductance (L) and capacitance...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Multispectral Infrared Colony Phenotyping for High-Throughput Microbiological Control of Waters.

Journal of biophotonics·2026
Same author

Highly stable diamagnetically levitated mechanical resonators with large masses exceeding 1.5 gram.

Microsystems & nanoengineering·2026
Same author

Gigahertz multimode vibrations in graphene and MoS<sub>2</sub> nanomechanical resonators at room temperature.

Science advances·2026
Same author

Multiphysics optomechanical sensing of a liquid on the micron scale.

Microsystems & nanoengineering·2026
Same author

Mechanical Resonant Sensing of Spin Texture Dynamics in a 2D Antiferromagnet.

Advanced materials (Deerfield Beach, Fla.)·2025
Same author

Microbial Identification Through Multispectral Infrared Imaging of Colonies: A New Type of Morpho-Spectral Fingerprinting.

Microbial biotechnology·2025

Related Experiment Video

Updated: May 7, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

1.3K

High frequency top-down junction-less silicon nanowire resonators.

Alexandra Koumela1, Sébastien Hentz, Denis Mercier

  • 1CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 GRENOBLE Cedex 9, France.

Nanotechnology
|October 11, 2013
PubMed
Summary

We developed novel silicon nanowires (SiNWs) using a top-down approach, transduced by field-effect transistor (FET) and piezoresistive (PZR) effects for advanced sensing applications.

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

7.3K
Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

11.2K

Related Experiment Videos

Last Updated: May 7, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

1.3K
Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

7.3K
Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

11.2K

Area of Science:

  • Nanotechnology
  • Solid-state physics
  • Electrical engineering

Background:

  • Silicon nanowires (SiNWs) are crucial for miniaturized electronic devices.
  • Developing efficient transduction mechanisms for SiNWs is essential for advanced applications.

Purpose of the Study:

  • To report the first realization of top-down silicon nanowires transduced by both junction-less field-effect transistor (FET) and piezoresistive (PZR) effects.
  • To demonstrate the performance of these SiNWs for sensing and timing applications.

Main Methods:

  • Fabrication of suspended SiNWs with widths down to ~20 nm using a 200 mm-wafer-scale VLSI process.
  • Utilizing both junction-less FET and PZR effects for transduction with the same SiNW.
  • Measuring Allan deviation (σA) for both transduction schemes at room temperature and low pressure.

Main Results:

  • Achieved SiNWs among the smallest top-down SiNWs reported.
  • Both FET and PZR transduction schemes showed comparable signal-to-background ratios, with PZR exhibiting a higher output signal.
  • Obtained σ(A) ~ 20 ppm for FET detection and σ(A) ~ 3 ppm for PZR detection.

Conclusions:

  • The developed SiNWs are highly suitable for ultra-dense arrays in gas/mass sensing, timekeeping, and logic switching.
  • CMOS co-integration and optimized geometry/doping promise orders of magnitude performance improvements.
  • These self-transducing SiNW resonators offer a promising platform for future integrated nanoelectronic systems.