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Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs
Young Joon Hong1, Jae Won Yang, Wi Hyoung Lee
1Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, 143-747, Korea; Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, 060-8628, Japan.
Abstract:
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.
