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Updated: May 7, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Chemical solution growth of ferroelectric oxide thin films and nanostructures
Nazanin Bassiri-Gharb1, Yaser Bastani, Ashley Bernal
1G.W. Woodruff School of Mechanical Engineering, and School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Dr., Atlanta, GA 30332-0405, USA. nazanin.bassiri@gatech.edu.
Abstract:
Chemical solution deposition (CSD) provides a low-cost, versatile approach for processing of thin and ultrathin ferroelectric films, as well as short and high aspect ratio ferroelectric nanostructures. This review discusses the state of the art in the processing of ferroelectric oxide thin films and nanostructures by CSD, with special emphasis on nucleation and growth phenomena. The effects of choice of precursor solution, substrate and bottom electrode stack, and thermal treatment conditions on the nucleation and growth are examined. Furthermore, methods to control ferroelectric thin film's microstructure, including phase content, texture, grain size and chemical homogeneity, are reviewed. Lastly, current CSD-based methods for processing of ferroelectric oxide nanostructures are presented with special consideration of the structural development, as well as advantages and shortcomings associated with each method. Lead zirconate-titanate, Pb(ZrxTi1-x)O3 (PZT), and barium titanate, BaTiO3 (BT), are used throughout the discussion, as specific examples for CSD processing of perovskite ferroelectrics.

