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Updated: May 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Bandgap tuning by using a lattice distortion induced by two symmetries that coexist in a quantum dot
Eui-Hyun Kong1, Yong-June Chang, Hyun-Jin Park
1Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea.
Abstract:
Among the interests in the application of quantum dots (QDs), the bandgap tuning is of key importance in controlling their material properties. The bandgap of a QD can be adjusted by adopting a variety of different physicochemical methods. Herein, a novel way of the bandgap tuning is developed in an Ag2S-based QD system by suitably quenching the transformation from monoclinic Ag2S to cubic Ag and by subsequently inducing a lattice-distorted region of ≈1-nm-scale in a QD. The two distinct crystalline phases of Ag2S and Ag coexisting with the lattice-distorted region are experimentally demonstrated by visually showing this remarkable coexistence in a QD. A new approach is presented to the bandgap tuning (2.51 to 1.64 eV) and enhancing optical properties by suitably tailoring the degree of the lattice-distorted region in a QD. This conceptual method could pave a new way to utilizing quantum effects in various QD applications.
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