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Updated: May 6, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Properties of strained structures and topological defects in graphene
Jiong Lu1, Yang Bao, Chen Liang Su
1Department of Chemistry, National University of Singapore , 3 Science Drive 3, Singapore 117543.
Abstract:
Strain and defect engineering of graphene can modify the topological features of electronic states, leading to novel properties such as pseudomagnetism in bubbles and metallicity in extended topological defects. A consequence of graphene being a soft membrane is that it can be strain-engineered to become highly corrugated by modifying its adhesion to the substrate. Extended grain boundaries in graphene can be constructed from periodic combinations of nonhexagonal rings (5-7 pairs). However, a controlled method of producing these defects is not currently available. In this Perspective, we discuss some of the recent advances in studying the properties and formation mechanisms of strained structures and defects in graphene, extending across both physics and chemistry.
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