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Oxygen diffusion and nonstoichiometry in BiFeO3.

Toshimitsu Ito1, Tomoharu Ushiyama, Mitsuko Aoki

  • 1National Institute of Advanced Industrial Science and Technology (AIST) , 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan.

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Controlling oxygen content in bismuth ferrite (BiFeO3) is key to reducing leakage current. Annealing BiFeO3 causes two oxygen diffusion steps, leading to defects that must be avoided for insulating materials.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Ferroelectricity

Background:

  • Leakage current hinders ferroelectric applications of room-temperature multiferroics like bismuth ferrite (BiFeO3).
  • Oxygen nonstoichiometry is a primary cause of this leakage current in BiFeO3.

Purpose of the Study:

  • To investigate the annealing process of stoichiometric BiFeO3 grains in air.
  • To understand and control oxygen content for improved material properties.

Main Methods:

  • Annealing of stoichiometric BiFeO3 grains in air.
  • Monitoring sample weight changes to analyze oxygen diffusion dynamics.

Main Results:

  • Oxygen diffusion occurs in two distinct steps during annealing.
  • Step 1: Rapid weight loss due to surface oxygen deficiency, causing leakage current.
  • Step 2: Gradual weight increase from internal oxygen diffusion, leading to excess oxygen and inhomogeneity.

Conclusions:

  • The two-step oxygen diffusion process during annealing creates defects responsible for leakage current and inhomogeneity in BiFeO3.
  • Avoiding these annealing-induced defects is crucial for synthesizing homogeneous, highly insulating BiFeO3.
  • Controlling atmospheric oxygen partial pressure during crystal growth and utilizing the inner part of the crystal are recommended for optimal synthesis.