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Published on: April 12, 2018
Two-dimensional carrier distribution in top-gate polymer field-effect transistors: correlation between width of
Auke J Kronemeijer1, Vincenzo Pecunia, Deepak Venkateshvaran
1Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom.
Abstract:
A general semiconductor-independent two-dimensional character of the carrier distribution in top-gate polymer field-effect transistors is revealed by analysing temperature-dependent transfer characteristics and the sub-bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.
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