Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A transendocardial delivery and intracardiac ultrasound irradiation treatment catheter.

Drug delivery·2013

Same author

The MDS-UPDRS Part II (motor experiences of daily living) resulted useful for assessment of disability in Parkinson's disease.

Parkinsonism & related disorders·2013

Same author

C3orf58, a novel paracrine protein, stimulates cardiomyocyte cell-cycle progression through the PI3K-AKT-CDK7 pathway.

Circulation research·2013

Same author

Morphological weighted penalized least squares for background correction.

The Analyst·2013

Same author

[Management of Kasabach-Merritt syndrome by drug therapy and surgery].

Zhonghua zheng xing wai ke za zhi = Zhonghua zhengxing waike zazhi = Chinese journal of plastic surgery·2013

Same author

Chemical constituents of fine particulate air pollution and pulmonary function in healthy adults: the Healthy Volunteer Natural Relocation study.

Journal of hazardous materials·2013

Same journal

Correction: A method for supervoxel-wise association studies of age and other non-imaging variables from coronary computed tomography angiograms.

Scientific reports·2026

Same journal

Poly(bromophenol blue)/CoSn(OH)<sub>6</sub> cubic particles modified pencil graphite electrode for electrochemical determination of diphenhydramine.

Scientific reports·2026

Same journal

Dietary Chlorella, Spirulina, and acidifier modulate jejunal cytokine-related gene expression in broiler chickens.

Scientific reports·2026

Same journal

Perceived physical activity barriers in university students: associations with fatigue and eating behaviours.

Scientific reports·2026

Same journal

Refuge limitation structures habitat use in agricultural landscapes: evidence from Sunda pangolins.

Scientific reports·2026

Same journal

Lightweight stateless transaction verification with outsourced witness updates for UTXO blockchains.

Scientific reports·2026

See all related articles

Search research articles

Related Experiment Video

Updated: May 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Solution processed molecular floating gate for flexible flash memories.

Ye Zhou¹, Su-Ting Han, Yan Yan

¹Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR.

Scientific Reports

|November 1, 2013

Summary

This summary is machine-generated.

Solution-processed fullerene (C60) enables low-voltage nonvolatile memory on flexible substrates. Fullerene floating gates show excellent charge trapping, memory window, and endurance for flexible electronics.

More Related Videos

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

Accessible Silicone Chip-to-Membrane Sealing Procedure for Flexible, Reliable Bonding

Accessible Silicone Chip-to-Membrane Sealing Procedure for Flexible, Reliable Bonding

Published on: March 20, 2026

Related Experiment Videos

Last Updated: May 6, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

Accessible Silicone Chip-to-Membrane Sealing Procedure for Flexible, Reliable Bonding

Accessible Silicone Chip-to-Membrane Sealing Procedure for Flexible, Reliable Bonding

Published on: March 20, 2026

Area of Science:

Materials Science
Electronics Engineering
Nanotechnology

Background:

Flexible electronics require novel memory devices with high performance.
Fullerene derivatives offer promising properties for charge storage applications.

Purpose of the Study:

To investigate the charge trapping mechanisms in fullerene (C60) based floating gate memory.
To evaluate device performance using different organic semiconductors on flexible substrates.

Main Methods:

Fabrication of nonvolatile memory devices with a fullerene (C60) molecular floating gate layer.
Systematic study of charge trapping in devices using p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductors.
Analysis of memory window, charge retention, endurance, and flexibility.

Main Results:

Fullerene (C60) floating gates demonstrated effective charge trapping for both hole and electron carriers with pentacene.
Devices with F16CuPc exclusively showed electron trapping due to high electron density.
All fabricated devices exhibited a large memory window, long charge retention, good endurance, and excellent flexibility.

Conclusions:

Solution-processed fullerene (C60) is a viable material for high-performance flexible nonvolatile memory.
The charge trapping characteristics can be tuned by the choice of organic semiconductor.
These findings hold significant potential for large-area flexible electronic applications.