3D analysis of advanced nano-devices using electron and atom probe tomography

Area of Science:

• Materials Science
• Nanotechnology
• Physics

Background:

• Advanced nano-devices with 3D architectures require precise characterization at the nanoscale.
• Existing techniques like electron tomography and atom probe tomography (APT) have limitations in providing complete structural and chemical information.

Purpose of the Study:

• To develop and validate an original method for characterizing gate-all-around and tri-gate silicon nanowire transistors.
• To assess the combined capabilities of electron tomography and APT for 3D nano-device analysis.

Main Methods:

• Utilized a combination of electron tomography and atom probe tomography (APT).
• Applied atomic density correction and electron tomography data to refine APT reconstructions.
• Investigated morphological structure, dimensional variations, and 3D chemical distribution.

Main Results:

• Electron tomography accurately determines morphological structure and dimensional variations but lacks absolute chemical identification.
• APT maps 3D chemical distribution but introduces significant volumetric distortions.
• The combined method successfully corrects APT distortions and enhances understanding of evaporation mechanisms.

Conclusions:

• A synergistic approach combining electron tomography and APT is essential for complete 3D characterization of nano-devices.
• This integrated methodology improves the accuracy of dimensional measurements and chemical mapping.
• The findings facilitate the optimization of nano-device fabrication and performance analysis.