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Anomalous resistance overshoot in the integer quantum Hall effect.

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Area of Science:

  • Condensed matter physics
  • Quantum Hall effect studies
  • Low-temperature experimental physics

Background:

  • Investigating magneto-transport properties of intermediate mobility two-dimensional electron systems (2DES).
  • Analyzing phenomena within the screening theory of the integer quantized Hall effect.
  • Understanding the overshoot effect at the low magnetic field ends of quantized plateaus.

Purpose of the Study:

  • To investigate the overshoot effect in smooth edge-narrow Hall bars.
  • To analyze the temperature dependence of the overshoot effect in chemically etched Hall bars.
  • To explore the control of the overshoot effect in gate-defined Hall bars.

Main Methods:

  • Experimental measurements of magneto-transport properties.
  • Utilizing smooth edge-narrow Hall bar devices.
  • Employing gate voltages to modulate device characteristics.

Main Results:

  • Observed a non-monotonic increase in Hall resistance (overshoot effect) at quantized plateau edges.
  • Found the overshoot effect becomes more pronounced at elevated temperatures in etched Hall bars.
  • Demonstrated direct control over the overshoot effect amplitude using gate voltages in gate-defined Hall bars.
  • Observed the overshoot effect at both odd and even integer plateaus, supporting a spin-independent explanation.

Conclusions:

  • The overshoot effect in 2DES is influenced by temperature and gate control.
  • Experimental evidence supports a spin-independent explanation for the overshoot effect.
  • Scattering between evanescent incompressible channels provides a comprehensive explanation for the observed phenomena.