Related Experiment Video
Updated: May 6, 2026

Hydrogen Charging of Aluminum using Friction in Water
Published on: January 28, 2020
Orbital-free density-functional theory simulations of the dynamic structure factor of warm dense aluminum
T G White1, S Richardson, B J B Crowley
1Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom.
Abstract:
Here, we report orbital-free density-functional theory (OF DFT) molecular dynamics simulations of the dynamic ion structure factor of warm solid density aluminum at T=0.5 eV and T=5 eV. We validate the OF DFT method in the warm dense matter regime through comparison of the static and thermodynamic properties with the more complete Kohn-Sham DFT. This extension of OF DFT to dynamic properties indicates that previously used models based on classical molecular dynamics may be inadequate to capture fully the low frequency dynamics of the response function.
More Related Videos
10:52Multiscale Sampling of a Heterogeneous Water/Metal Catalyst Interface using Density Functional Theory and Force-Field Molecular Dynamics
Published on: April 12, 2019
09:22Casting Protocols for the Production of Open Cell Aluminum Foams by the Replication Technique and the Effect on Porosity
Published on: December 11, 2014
Related Concept Videos
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Trends in Lattice Energy: Ion Size and Charge
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and...
Valence Bond Theory
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...