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Related Concept Videos

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

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Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
There are three main types of inductively coupled plasma atomic emission spectroscopy  (ICP-AES) instruments: sequential, simultaneous multichannel, and Fourier transform instruments, with the latter being less commonly used....
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Related Experiment Video

Updated: May 6, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Linear array of InAs APDs operating at 2 µm.

Ian C Sandall, Shiyong Zhang, Chee Hing Tan

    Optics Express
    |November 13, 2013
    PubMed
    Summary

    This study fabricated a 128-pixel InAs avalanche photodiode (APD) array, demonstrating uniform dark currents and gain across temperatures. The InAs APD array shows promising performance for infrared detection applications.

    Area of Science:

    • Semiconductor Physics
    • Optoelectronics
    • Materials Science

    Background:

    • Avalanche photodiodes (APDs) are crucial for sensitive light detection.
    • Indium Arsenide (InAs) offers potential for infrared applications.
    • Uniformity in device performance is essential for array-based systems.

    Purpose of the Study:

    • To fabricate and characterize a 128-pixel InAs APD linear array.
    • To assess the uniformity of dark current and avalanche gain.
    • To evaluate the performance at different temperatures and bias voltages.

    Main Methods:

    • Fabrication of a 128-pixel InAs APD linear array.
    • Measurement of dark currents and avalanche gain at 77 K, 200 K, and room temperature.
    • Performance evaluation at a wavelength of 2.04 µm.

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    Main Results:

    • The InAs APD array exhibited highly uniform dark currents and avalanche gain.
    • Some defective pixels were observed at the array edges.
    • At 200 K and 2.04 µm, an unmultiplied responsivity of 0.61 A/W at 0 V and a gain of 8.5 at 10 V were achieved.

    Conclusions:

    • The fabricated InAs APD linear array demonstrates excellent uniformity and potential for infrared sensing.
    • The device performance is stable across a range of temperatures.
    • Further optimization can address edge pixel defects for enhanced array performance.