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Updated: May 5, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Thermal stability of gallium-doped zinc oxide thin film on glass substrates by an RF sputtering process
Jong-Ho Kang1, Myung-Hyun Lee, Young Soo Lim
1Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Seoul 153-801, Korea.
Abstract:
The effects of a heat treatment on the structural and electrical properties of GZO thin films grown by RF magnetron sputtering were investigated. The heat treatment involved temperatures in the range from 200 degrees C to 500 degrees C under air. As the temperature was increased, the electrical properties of GZO thin films increased exponentially and the surface morphology was drastically altered. The effect of temperature is discussed based on electrical and structural characterization of the materials.
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