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Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment

Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment

Published on: April 4, 2017

Nanoscale plasmonic memristor with optical readout functionality.

Alexandros Emboras¹, Ilya Goykhman, Boris Desiatov

¹Department of Applied Physics, The Benin School of Engineering and Computer Science, The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Israel , 91904.

|November 22, 2013

Summary

This summary is machine-generated.

This study introduces a novel nanoscale resistive random access memory (RRAM) device with integrated plasmonic waveguides for optical readout. This innovation enables optical state detection in memory devices.

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Area of Science:

Nanotechnology
Optoelectronics
Materials Science

Background:

Resistive random access memory (RRAM) offers high-density data storage.
Optical readout methods are desirable for high-speed data access.
Integrating electronic memory with photonic components is a key challenge.

Purpose of the Study:

To demonstrate a nanoscale RRAM device with integrated plasmonic waveguides for optical readout.
To achieve CMOS-compatible fabrication of a hybrid optoelectronic memory device.
To enable optical detection of memory states via transmission levels.

Main Methods:

Utilizing silicon-on-insulator (SOI) technology with local oxidation for simultaneous RRAM and waveguide fabrication.
Integrating a plasmonic waveguide with a nanoscale RRAM cell.
Operating the device at a telecom wavelength of 1.55 μm.
Characterizing optical transmission for memory state readout.

Main Results:

Successful fabrication of a hybrid RRAM-plasmonic waveguide device.
Demonstration of two distinct optical transmission levels corresponding to memory states.
Observation of optical bistable behavior and hysteresis.
Attribution of optical changes to a nanoscale metallic filament.

Conclusions:

The developed device integrates RRAM functionality with optical readout capabilities.
CMOS-compatible fabrication enables potential for scalable optoelectronic memory.
The device exhibits optical bistability for non-volatile memory applications.