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A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Published on: May 28, 2016

Atomistic simulation on indented defects in silicon.

Long Trandinh¹, Seong Sik Cheon, Woojong Kang

¹School of Mechanical Engineering, Hanoi University of Science and Technology, Hanoi, 100000, Vietnam.

Journal of Nanoscience and Nanotechnology

|November 26, 2013

Summary

This study used atomistic simulations to investigate defects in silicon thin films during nano-indentation. A novel method identified dislocations and stacking faults, revealing insights into silicon

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Materials Science
Condensed Matter Physics
Computational Materials Science

Background:

Silicon's semiconductive properties are crucial for electronics.
Internal defects can compromise silicon's electronic characteristics.
Understanding defect behavior is vital for material reliability.

Purpose of the Study:

Investigate defects in single crystalline silicon thin film.
Analyze defect formation and propagation under nano-indentation.
Develop a novel method for defect identification.

Main Methods:

Atomistic simulation of nano-indentation at zero temperature.
Utilized Tersoff potential and a spherical indenter model.
Proposed and applied the symmetric axis parameter method for defect identification.

Main Results:

Observed ring slip near the indentation region, propagating along [110]/(111).
Dislocations initiated near ring slips and emitted on the (111) plane via dissociation.
The symmetric axis parameter method successfully distinguished perfect dislocations, partial dislocations, and stacking faults from the diamond cubic structure.

Conclusions:

Nano-indentation induces specific defect structures in silicon.
The symmetric axis parameter method is effective for defect analysis in crystalline silicon.
Further refinement may distinguish dislocation sets.