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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

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A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

A M See1, O Klochan, A P Micolich

  • 1School of Physics, University of New South Wales, Sydney NSW 2052, Australia.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|November 27, 2013
PubMed

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