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Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures.

Wei-Liang Chen1, Yu-Yang Lee, Chiao-Yun Chang

  • 1Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan.

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|December 3, 2013
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Summary

Depth-resolved confocal micro-Raman spectroscopy characterizes Gallium Nitride (GaN)-based LEDs. This technique analyzes the active layer and strain distribution, offering insights into LED performance.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Spectroscopy

Background:

  • Gallium Nitride (GaN)-based LEDs are crucial optoelectronic devices.
  • Characterizing the active layer and strain distribution is vital for optimizing LED performance.
  • Non-destructive, in-situ analysis methods are needed for buried LED structures.

Purpose of the Study:

  • To demonstrate depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based LEDs.
  • To accurately map the active layer and strain distribution within LEDs.
  • To establish a remote optical technique for in operando LED analysis.

Main Methods:

  • Depth-resolved confocal micro-Raman spectroscopy was employed.
  • The depth compression effect due to refractive index mismatch was accounted for.
  • Raman peak intensities and shifts (A1(LO) and E2(high) phonon peaks) were analyzed.

Main Results:

  • Accurate matching of LED structural dimensions was achieved by correcting for depth compression.
  • Unique Raman features from the 0.3 μm thick active layer were identified.
  • Depth-dependent strain variations were quantified using Raman shifts.

Conclusions:

  • Depth-resolved confocal micro-Raman spectroscopy effectively characterizes the active layer of GaN-based LEDs.
  • The technique allows for depth-resolved strain distribution analysis.
  • This method serves as a potential optical and remote tool for in operando investigation of nitride-based LEDs.