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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Nanotechnology

    Background:

    • Quantum dot (QD) materials offer unique optoelectronic properties.
    • Electro-optic (EO) modulators are crucial for high-speed optical communication systems.
    • Anisotropy in material properties can be exploited to enhance device performance.

    Purpose of the Study:

    • To investigate and quantify the anisotropic electro-optic (EO) effect in InGaAs quantum dot (QD) chain modulators.
    • To determine the linear EO coefficients and half-wave voltages along different crystallographic directions.
    • To establish the potential of QD chain structures for advanced modulator applications.

    Main Methods:

    • Fabrication of InGaAs quantum dot chain structures.
    • Measurement of electro-optic coefficients using interferometric techniques.
    • Characterization of modulator performance at 1.55 μm and 1.32 μm wavelengths.
    • Determination of half-wave voltages (Vπs) and 3 dB bandwidths.

    Main Results:

    • The linear EO coefficients were measured to be 24.3 pm/V and 30.6 pm/V along [011] and [011¯] directions, respectively.
    • Half-wave voltages (Vπs) were found to be 5.35 V and 4.65 V at 1.55 μm, and 4.35 V and 3.86 V at 1.32 μm.
    • The modulators demonstrated 3 dB bandwidths exceeding 10 GHz.
    • This work presents the first report on the anisotropic EO effect in QD chain structures.

    Conclusions:

    • InGaAs QD chain structures exhibit significant anisotropic electro-optic effects.
    • The measured EO coefficients and low half-wave voltages indicate high potential for these modulators.
    • The demonstrated high bandwidths confirm their suitability for high-speed optical communication applications.