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Updated: May 4, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Wiedemann-Franz relation and thermal-transistor effect in suspended graphene
1Department of Physics, Concordia University , Montréal, Québec, H4B 1R6 Canada.
Abstract:
We extract experimentally the electronic thermal conductivity, Ke, in suspended graphene that we dope using a back-gate electrode. We make use of two-point dc electron transport at low bias voltages and intermediate temperatures (50-160 K), where the electron and lattice temperatures are decoupled. The thermal conductivity is proportional to the charge conductivity times the temperature, confirming that the Wiedemann-Franz relation is obeyed in suspended graphene. We extract an estimate of the Lorenz coefficient as 1.1-1.7 × 10(-8) W ΩK(-2). Ke shows a transistor effect and can be tuned with the back-gate by more than a factor of 2 as the charge carrier density ranges from ∼0.5 to 1.8 × 10(11) cm(-2).
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