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Related Experiment Video

Updated: May 4, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Heterogeneously integrated III-V/silicon distributed feedback lasers.

S Keyvaninia, S Verstuyft, L Van Landschoot

|December 18, 2013

Summary

This summary is machine-generated.

Heterogeneously integrated III-V-on-silicon lasers were developed using a novel die-to-wafer bonding process. This breakthrough enables high-performance silicon photonics with enhanced laser output and stability.

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Area of Science:

Photonics
Materials Science
Semiconductor Devices

Background:

III-V-on-silicon integration is crucial for advanced photonic integrated circuits.
Existing bonding techniques face challenges in achieving high performance and scalability.

Purpose of the Study:

To demonstrate a novel heterogeneously integrated III-V-on-silicon second-order distributed feedback (DFB) laser.
To showcase a DFB laser design with high confinement in the active waveguide.
To achieve high output power and stable operation for silicon photonics applications.

Main Methods:

Utilized an ultra-thin DVS-BCB die-to-wafer bonding process for heterogeneous integration.
Designed a novel DFB laser exploiting high confinement in the active waveguide.
Characterized laser performance including output power, side-mode suppression ratio, and operating temperature.

Main Results:

Achieved a 14 mW single-facet output power coupled to a silicon waveguide.
Demonstrated a side-mode suppression ratio of 50 dB.
Obtained continuous wave operation up to 60°C around 1550 nm.

Conclusions:

The developed DVS-BCB die-to-wafer bonding process enables high-performance III-V-on-silicon DFB lasers.
The novel laser design offers significant improvements in output power and spectral purity.
This work paves the way for advanced silicon photonic integrated circuits.