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Updated: May 4, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Monolayer hexagonal boron nitride films with large domain size and clean interface for enhancing the mobility of
Lifeng Wang1, Bin Wu, Jisi Chen
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China; Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Harbin, 150080, P. R. China.
Abstract:
Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance.
