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Ultracompact (3 μm) silicon slow-light optical modulator.
Aron Opheij1, Nir Rotenberg1, Daryl M Beggs2
1Center for Nanophotonics, FOM Institute AMOLF, Science Park 104, 1098 XG, Amsterdam, The Netherlands.
Scientific Reports
|December 19, 2013
Summary
We developed a compact 3 μm photonic crystal waveguide modulator using silicon on insulator (SOI) material. This novel device achieves a broad optical bandwidth, outperforming longer modulators for on-chip optical interconnects.
Area of Science:
- Photonics and Optical Engineering
- Materials Science (Silicon Photonics)
Background:
- Wavelength-scale optical modulators are critical for on-chip optical interconnects.
- Modulator design involves trade-offs between bandwidth, size, and fabrication complexity.
- Device size impacts capacitance and energy consumption, making miniaturization crucial.
Purpose of the Study:
- To demonstrate a novel, ultra-compact optical modulator.
- To investigate the performance of a short photonic crystal waveguide modulator.
- To explore the benefits of slow-light enhanced absorption in silicon on insulator (SOI) modulators.
Main Methods:
- Fabrication of a 3 μm long photonic crystal waveguide modulator on SOI.
- Utilized free-carrier injection to induce slow-light enhanced absorption.
- Combined refractive index shift with absorption modulation for enhanced bandwidth.
Main Results:
- Achieved a 7 nm optical bandwidth at 1550 nm with a 10 dB extinction ratio.
- Demonstrated modulation times between 500 ps and 100 ps.
- The 3 μm modulator unexpectedly outperformed an 80 μm device in performance.
Conclusions:
- Ultra-compact (3 μm) SOI modulators can achieve significant optical bandwidth.
- Slow-light enhanced absorption is effective for broadband modulation in small devices.
- Miniaturized modulators offer superior performance compared to larger counterparts for optical interconnects.
