Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

1.4K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907
Diode: Reverse bias01:14

Diode: Reverse bias

2.7K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.7K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
Diode: Forward bias01:20

Diode: Forward bias

2.6K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.6K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications.

Micromachines·2026
Same author

Prevalence and Determinants of Eating Behaviors Among School-Going Children in Bangladesh: A Cross-Sectional Study.

Nutrition and metabolic insights·2026
Same author

Vascularization of Human Pancreatic Islets With Adaptive Endothelial Cells for In Vitro Analysis and In Vivo Transplantation.

Bio-protocol·2025
Same author

Breaking Barriers: Synergistic Interactions Between Pt Single Atoms and Nitrogen-Rich g-C<sub>3</sub>N<sub>4</sub> for Maximized Photocatalytic Hydrogen Production.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Organic Fouling on Zwitterionic Amphiphilic Copolymers: Implications in Biofouling.

ACS applied materials & interfaces·2025
Same author

Rational Design of Organic Manganese Halides for High Quantum Efficiency and Stability.

Small (Weinheim an der Bergstrasse, Germany)·2025

Related Experiment Video

Updated: May 4, 2026

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
08:25

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

2.0K

Tunable reverse-biased graphene/silicon heterojunction Schottky diode sensor.

Amol Singh1, Ahsan Uddin, Tangali Sudarshan

  • 1Department of Electrical Engineering, University of South Carolina, Columbia, SC, 29208, USA.

Small (Weinheim an Der Bergstrasse, Germany)
|December 31, 2013
PubMed
Summary

A novel graphene/silicon chemical sensor offers highly sensitive, low-power molecular detection. Its bias-controlled sensitivity enhances detection of gases like nitrogen dioxide and ammonia.

Keywords:
capacitance-voltage measurementsgraphene/Si heterojunctionreverse biassensorstunable

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

9.8K

Related Experiment Videos

Last Updated: May 4, 2026

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
08:25

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver

Published on: August 27, 2021

2.0K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

9.8K

Area of Science:

  • Materials Science
  • Nanoscience
  • Chemical Sensing

Background:

  • Graphene's unique properties enable novel electronic devices.
  • Chemical sensors are crucial for environmental and industrial monitoring.
  • Existing sensors often face limitations in sensitivity and power consumption.

Purpose of the Study:

  • To develop a new chemical sensor with enhanced bias-dependent molecular detection sensitivity.
  • To achieve ultrahigh sensitivity and low operating power using a graphene/silicon heterojunction.
  • To demonstrate tunable sensitivity through bias control and heterojunction engineering.

Main Methods:

  • Fabrication of a reverse-biased graphene/silicon heterojunction diode.
  • Utilizing graphene's atomically thin nature to modulate the interface barrier height.
  • Employing capacitance-voltage measurements to confirm the sensing mechanism.

Main Results:

  • The sensor exhibited extremely high bias-dependent molecular detection sensitivity.
  • Achieved ultrahigh sensitivity by exploiting exponential changes in junction current.
  • Demonstrated significantly higher sensitivity (13x for NO₂, 3x for NH₃) and lower power consumption (∼500x less) compared to conventional sensors.
  • Tunable sensitivity was achieved by controlling graphene's work function and heterojunction Schottky barrier height.

Conclusions:

  • The developed graphene/silicon heterojunction chemical sensor offers a promising platform for sensitive and low-power gas detection.
  • The bias-dependent modulation of the Schottky barrier height is key to the sensor's enhanced performance.
  • This technology has potential applications in environmental monitoring and industrial safety.