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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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Vertical graphene spin valves based on La(2/3)Sr(1/3)MnO(3) electrodes.

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|January 7, 2014
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We fabricated La2/3Sr1/3MnO3 (LSMO)/graphene/Co structures showing spin valve effects from room temperature to 5 K. These devices exhibit tunable current-voltage characteristics, indicating potential for memory and logic applications.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Spintronics

Background:

  • Spin valves are crucial for magnetic sensors and memory devices.
  • Graphene's unique electronic properties make it a promising material for spintronic applications.
  • Integrating magnetic materials with graphene can lead to novel device functionalities.

Purpose of the Study:

  • To fabricate and characterize La2/3Sr1/3MnO3 (LSMO)/graphene/Co sandwich structures.
  • To investigate the spin valve properties of these structures over a wide temperature range.
  • To explore the potential applications of these graphene-based spin valves in electronic devices.

Main Methods:

  • Fabrication of LSMO/graphene/Co sandwich structures using single-layer graphene as an interlayer.
  • Measurement of current-voltage (I-V) characteristics from room temperature down to 5 K.
  • Analysis of spin valve signals and their temperature dependence.

Main Results:

  • Appreciable negative spin valve signals were observed across the entire measured temperature range (room temperature to 5 K).
  • Nonlinear current-voltage (I-V) characteristics were observed around room temperature, indicating dominant tunneling effects.
  • Linear (Ohmic) behavior in I-V curves was evident at low temperatures.

Conclusions:

  • The fabricated LSMO/graphene/Co structures exhibit significant spin valve effects.
  • The temperature-dependent I-V characteristics suggest a transition from tunneling to Ohmic transport.
  • These vertical graphene spin valves hold promise for future applications in memory storage and logic operations.