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Updated: May 4, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
A measurement technique for circumventing hysteresis and conductance drift in carbon nanotube field-effect
Andrew Tunnell1, Vincent Ballarotto, John Cumings
1Laboratory for Physical Sciences, University of Maryland, College Park, MD 20742, USA. Department of Physics, University of Maryland, College Park, MD 20742, USA.
Abstract:
We present a measurement protocol that effectively eliminates both the hysteresis and the temporal drift typically observed in the channel conductance of single-walled carbon nanotube field-effect transistors (SWNT FETs) during the application of gate voltages. Before each resistance measurement, the gate is first stepped through a series of alternating positive and negative voltages to produce a neutral charge distribution within the device. This process is highly effective at removing the hysteresis in the channel conductance, and time-dependent measurements further demonstrate that the drain current is stable and single-valued, independent of the prior measurement history. The effectiveness of this method can be understood within the Preisach hysteresis model, which we demonstrate as a useful framework to predict the observed results.
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