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Updated: May 4, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Phase stability and defect physics of a ternary ZnSnN(2) semiconductor: first principles insights
Shiyou Chen1, Prineha Narang, Harry A Atwater
1Joint Center for Artificial Photosynthesis, CA, USA; Materials Sciences Division, Lawrence Berkeley National Laboratory, One Cyclotron Road, Mail Stop 66, Berkeley, CA, 94720, USA.
Abstract:
First-principles calculations show that ZnSnN2 has a very small formation enthalpy, and the donor defects such as SnZn antisites and ON impurities have high concentration, making the material degenerately n-type, which explains the observed high electron concentration. ZnSnN2 can be regarded as a new material that combines a metal-like conductivity with an optical bandgap around 2 eV.
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