Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Ferromagnetism01:31

Ferromagnetism

2.8K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.8K
Diamagnetism01:26

Diamagnetism

2.8K
Materials consisting of paired electrons have zero net magnetic moments. However, when these materials are placed under an external magnetic field, the moments opposite to the field are induced. Such materials are called diamagnets. Diamagnetism is the response of the diamagnets when placed in an external magnetic field.
Diamagnetism was discovered by Anton Brugmans in 1778 when he observed that bismuth gets repelled by magnetic fields, thus theorizing that diamagnets get repelled by magnets....
2.8K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907
Valence Bond Theory02:42

Valence Bond Theory

8.9K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
8.9K
Paramagnetism01:30

Paramagnetism

2.4K
Paramagnets are materials with unpaired electrons that possess a finite magnetic moment. In the absence of a magnetic field, these moments are randomly oriented, and thus the net moment is zero. Under an external field, a torque acting on the moments tends to align them along the field's direction. However, the random thermal motion of electrons produces a torque opposite to the external field and tries to disorient the moments. These two competing effects align only a few moments along the...
2.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[ATM/H2AX and repair of sperm-DNA damage during cryopreservation].

Zhonghua nan ke xue = National journal of andrology·2011
Same author

Predicting accident frequency at their severity levels and its application in site ranking using a two-stage mixed multivariate model.

Accident; analysis and prevention·2011
Same author

Photothermally enhanced photodynamic therapy delivered by nano-graphene oxide.

ACS nano·2011
Same author

[Characteristics of soil respiration in Phyllostachys edulis forest in Wanmulin Natural Reserve and related affecting factors].

Ying yong sheng tai xue bao = The journal of applied ecology·2011
Same author

Quality changes in sea urchin (Strongylocentrotus nudus) during storage in artificial seawater saturated with oxygen, nitrogen and air.

Journal of the science of food and agriculture·2011
Same author

Global effect of an RNA polymerase β-subunit mutation on gene expression in the radiation-resistant bacterium Deinococcus radiodurans.

Science China. Life sciences·2011

Related Experiment Video

Updated: May 4, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K

Realizing ferromagnetic coupling in diluted magnetic semiconductor quantum dots.

Wensheng Yan1, Qinghua Liu, Chao Wang

  • 1National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, Anhui 230029, China.

Journal of the American Chemical Society
|January 11, 2014
PubMed
Summary

Researchers developed a core/shell structure to control ferromagnetic interactions in diluted magnetic semiconductor quantum dots (DMSQDs). This breakthrough enables ferromagnetic exchange in ZnO-based DMSQDs, advancing spintronics.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.0K

Related Experiment Videos

Last Updated: May 4, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.0K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Diluted magnetic semiconductor quantum dots (DMSQDs) are crucial for spintronics.
  • Controlling ferromagnetic interactions in DMSQDs is challenging due to antiferromagnetic coupling.

Purpose of the Study:

  • To propose an effective approach for achieving ferromagnetic exchange in ZnO-based DMSQDs.
  • To engineer the magnetic impurity energy levels using a core/shell structure.

Main Methods:

  • Fabrication of core/shell DMSQDs (Zn(0.96)Co(0.04)O core with ZnS or Ag2S shell).
  • First-principles calculations to analyze magnetic interactions and electronic structure.

Main Results:

  • Successful activation of ferromagnetic exchange in ZnO-based DMSQDs.
  • A ZnS shell induces an antiferromagnetic-to-ferromagnetic transition within 1.2 nm of the core surface.
  • Demonstrated control over exchange interactions in doped oxide nanostructures.

Conclusions:

  • Core/shell engineering is a viable strategy to manipulate exchange interactions in DMSQDs.
  • This approach offers new possibilities for spintronics applications.
  • The study paves the way for developing next-generation spin-based information technologies.