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Updated: Aug 11, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of SciencesP.O. Box 912, Beijing 100083, China.
Abstract:
We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3 μm emissions of InAs/GaAs QDs to 0.9 μm for detection by silicon avalanche photodiodes. The obtained g((2))(0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3 μm single-photon source based on semiconductor materials.

