Maximizing integrated optical and electrical properties of a single ZnO nanowire through native interfacial doping
Huaiyi Ding1, Nan Pan, Chao Ma
1Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P.R. China.
Advanced Materials (Deerfield Beach, Fla.)
|January 23, 2014
Abstract:
A native interfacial doping layer introduced in core-shell type ZnO nano-wires by a simple vapor phase re-growth procedure endows the produced nano-wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances.
