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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Germanium nanowires (NWs) are promising for nanoscale electronic devices.
  • Nonvolatile memories require stable charge storage and low leakage.
  • Germanium oxide (GeO2) is a potential dielectric material for memory applications.

Purpose of the Study:

  • To investigate the use of intrinsic germanium nanowires with germanium oxide shells for nonvolatile memory applications.
  • To understand the role of the germanium oxide shell thickness in memory performance, particularly retention.
  • To establish a simple method for fabricating devices with improved memory characteristics.

Main Methods:

  • Fabrication of germanium nanowire field-effect transistors with varying germanium oxide shell thicknesses.
  • Characterization of memory performance, including memory window, ON/OFF ratio, and retention.
  • Utilizing air annealing as a method to control germanium oxide shell thickness.

Main Results:

  • Devices exhibited a large memory window and high ON/OFF ratio, indicating effective memory operation.
  • Thicker germanium oxide shells, achieved via air annealing, significantly improved charge retention.
  • Surface charge trapping within the germanium oxide layer is identified as the mechanism for the memory effect.

Conclusions:

  • Intrinsic germanium nanowires with germanium oxide shells are suitable for nanoscale nonvolatile memories.
  • The thickness of the germanium oxide shell is critical for achieving good data retention.
  • Air annealing provides a simple and effective route to enhance the performance of germanium nanowire-based memories.