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Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer
J Gorchon1, J Curiale2, A Lemaître3
1Laboratoire de Physique des Solides, Université Paris-Sud, CNRS, UMR8502, 91405 Orsay, France.
Abstract:
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material.
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