Related Experiment Video
Updated: May 3, 2026
10:36
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
10.6K
Charge density dependent two-channel conduction in organic electric double layer transistors (EDLTs)
Wei Xie1, Feilong Liu, Sha Shi
1Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE, Minneapolis, MN, 55455, USA.
Advanced Materials (Deerfield Beach, Fla.)
|February 6, 2014
Summary
A new model explains conductivity peaks in rubrene transistors using hole-density-dependent trapping. It reveals that conduction shifts between free-site and trap-site channels as hole density increases.
Area of Science:
- Organic electronics
- Materials science
- Semiconductor physics
Background:
- Rubrene electric double layer transistors (EDLTs) exhibit unusual conductivity behavior.
- Understanding charge transport mechanisms in organic semiconductors is crucial for device applications.
Purpose of the Study:
- To propose a transport model explaining the observed conductivity peaks in rubrene EDLTs.
- To elucidate the role of hole density and trapping in rubrene conductivity.
Main Methods:
- Development of a transport model incorporating hole-density-dependent trapping.
- Analysis of conduction pathways in rubrene based on varying surface hole densities.
Main Results:
- The model successfully explains two conductivity peaks at surface hole densities above 10(13) cm(-2).
- Hole transport is shown to involve multiple percolation pathways.
- Conduction is dominated by free-site channels at low densities and trap-site channels at higher densities.
Conclusions:
- Hole-density-dependent trapping is key to understanding rubrene EDLT conductivity.
- The proposed model provides insight into charge transport mechanisms in organic transistors.
Related Concept Videos
01:30The Electrical Double Layer
241
In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
241
01:21Carrier Transport
1.2K
The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
1.2K
01:22Semiconductors
1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
01:25Boundary Conditions for Current Density
1.5K
Current density becomes discontinuous across an interface of materials with different electrical conductivities. The normal component of the current density is continuous across the boundary.
1.5K
01:22Biasing of FET
1.0K
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
1.0K
01:11P-N junction
1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K