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Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
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Novel First-Level Interconnect Techniques for Flip Chip on MEMS Devices.

Jemmy Sutanto1, Sindhu Anand1, Chetan Patel1

  • 1School of Biological and Health Systems Engineering, Arizona State University, Tempe, AZ 85287-9709 USA.

Journal of Microelectromechanical Systems : a Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems
|February 8, 2014
PubMed
Summary

Three novel techniques for first-level interconnect (FLI) on micro-electro-mechanical systems (MEMS) were developed. These scalable methods enable reliable flip-chip packaging and 3D stacking for MEMS devices.

Keywords:
3-D stacksBioMEMSflip chipflux contaminationinterconnectsmicrochippackagingsolder

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Mechanical Engineering

Background:

  • Flip-chip packaging offers reduced size and 3D stacking capabilities for micro-electro-mechanical systems (MEMS).
  • Developing reliable first-level interconnects (FLI) is crucial for MEMS packaging.

Purpose of the Study:

  • To demonstrate novel, microfabrication-free techniques for creating high-aspect-ratio FLIs on MEMS.
  • To evaluate the performance and reliability of these FLIs for MEMS flip-chip applications.

Main Methods:

  • Developed three FLI techniques: Ag epoxy dip and attach, solder paste dispense, and solder paste dispense, pull, and attach (DPAT).
  • Tested FLIs on MEMS moveable microelectrodes fabricated via SUMMiTV™ process.
  • Characterized bump dimensions, shear strength, and electrical resistance.

Main Results:

  • Achieved high-aspect-ratio interconnects without surface contamination or additional microfabrication.
  • Average bump heights: 101.3 μm (Ag) and 184.8 μm (solder).
  • Average shear strengths: 78 MPa (Ag) and 689 kPa (solder); reliable electrical interconnects demonstrated for Ag bumps.

Conclusions:

  • The developed FLI techniques are scalable and suitable for MEMS flip-chip packaging and 3D integration.
  • These methods provide reliable interconnects with no detrimental outgassing effects on MEMS devices.