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Related Concept Videos

Transformation of Plane Strain01:12

Transformation of Plane Strain

673
When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
673
Three-Dimensional Analysis of Strain01:29

Three-Dimensional Analysis of Strain

794
Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...
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Shearing Strain01:20

Shearing Strain

1.9K
The shearing strain represents a cubic element's angular change when subjected to shearing stress. This type of stress can transform a cube into an oblique parallelepiped without influencing normal strains. The cubic element experiences a significant transformation when exposed solely to shearing stress. Its shape alters from a perfect cube into a rhomboid, clearly demonstrating the effect of shearing strain. The degree of this strain is considered positive if it reduces the angle between the...
1.9K
Mohr's Circle for Plane Strain01:18

Mohr's Circle for Plane Strain

1.4K
Mohr's circle is a crucial graphical method used to analyze plane strain by plotting strain on a set of cartesian coordinates, where the abscissa is normal strain ∈ and the ordinate is shear strain γ. Similarly to Mohr’s circle for plane stress, two points X and Y are plotted. Their coordinates are (∈x, -γXY) and (∈Y, γXY), respectively.
Mohr's circle visually represents the strain states under various conditions, which is essential for...
1.4K
Plastic Behavior01:21

Plastic Behavior

810
A material's elastic behavior is characterized by the disappearance of stress once the load is removed, allowing the material to return to its original state. However, when stress surpasses the yield point, yielding commences, marking the onset of plastic deformation or permanent set. This change from elastic to plastic behavior is influenced by the peak stress value and the duration before the load is removed. An intriguing observation occurs when a specimen is loaded, unloaded, and...
810
Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity01:15

Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity

824
Deformation occurs in axial and transverse directions when an axial load is applied to a slender bar. This deformation impacts the cubic element within the bar, transforming it into either a rectangular parallelepiped or a rhombus, contingent on its orientation. This transformation process induces shearing strain. Axial loading elicits both shearing and normal strains. Applying an axial load instigates equal normal and shearing stresses on elements oriented at a 45° angle to the load axis.
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Manipulating topological phase transition by strain.

Junwei Liu1, Yong Xu1, Jian Wu1

  • 1Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China.

Acta Crystallographica. Section C, Structural Chemistry
|February 11, 2014
PubMed
Summary
This summary is machine-generated.

Strain induces a universal topological phase transition in narrow-gap semiconductors. This transition, driven by the opposite responses of valence and conduction bands to strain direction, offers new avenues for topological insulator applications.

Keywords:
computational materials discoveryconduction band minimumstrain-induced topological phase transitionvalence band maximum

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid-State Physics

Background:

  • Topological phase transitions are crucial for novel electronic properties.
  • Narrow-gap semiconductors with differing band parities are candidates for topological phenomena.

Purpose of the Study:

  • To investigate the phenomenon of strain-induced topological phase transitions.
  • To explore the universality of this transition in specific semiconductor types.
  • To understand the underlying mechanisms and potential applications.

Main Methods:

  • Utilized first-principles calculations.
  • Analyzed the behavior of valence band maximum (VBM) and conduction band minimum (CBM) under strain.
  • Investigated the influence of strain direction on band responses.

Main Results:

  • Demonstrated that strain-induced topological phase transition is a universal phenomenon in narrow-gap semiconductors where VBM and CBM have different parities.
  • Showed that the transition arises from the opposing responses of VBM and CBM to applied strain.
  • Highlighted the critical dependence of these responses on the strain direction.

Conclusions:

  • Strain is a powerful tool for tuning the electronic properties of topological insulators.
  • The findings pave the way for developing new topological insulators and their device applications.