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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers
Optics Express
|February 12, 2014
Summary
Researchers achieved passive mode-locking of InAs quantum dot (QD) lasers. This breakthrough in semiconductor lasers generated ultrashort pulses with low timing jitter for advanced applications.
Area of Science:
- Semiconductor laser physics
- Quantum dot optoelectronics
- Photonics and optical engineering
Background:
- Fabry-Perot lasers are fundamental optical devices.
- Quantum dots offer unique optoelectronic properties.
- Mode-locking is crucial for generating ultrashort optical pulses.
Purpose of the Study:
- To demonstrate passive mode-locking in single-section Fabry-Perot lasers.
- To investigate lasers based on Indium Arsenide (InAs) quantum dots (QDs).
- To analyze the performance of QD lasers on a (113)B Indium Phosphide (InP) substrate.
Main Methods:
- Fabrication of single-section Fabry-Perot laser diodes.
- Utilizing InAs quantum dots grown on a (113)B InP substrate.
- Employing single-mode fiber for intracavity dispersion compensation.
Main Results:
- Achieved self-starting passive mode-locking in 1 and 2 mm long laser diodes.
- Observed pulse repetition rates of approximately 23 and 39 GHz.
- Generated ultrashort pulses with durations down to 1.5 picoseconds (ps).
- Obtained a radio frequency (RF) spectral width as low as 20 kHz.
- Demonstrated low root-mean-square (RMS) timing jitter.
Conclusions:
- Successfully demonstrated passive mode-locking in InAs QD Fabry-Perot lasers.
- The QD lasers on (113)B InP substrate are suitable for generating high-repetition-rate, ultrashort pulses.
- The results indicate potential for low-timing-jitter applications in optical communications and signal processing.

