Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Nonlinear Terahertz Electroluminescence from Dirac-Landau Polaritons.

Physical review letters·2026
Same author

Black Hole Spectroscopy and Tests of General Relativity with GW250114.

Physical review letters·2026
Same author

Tailoring quantum walks in integrated photonic lattices.

Optics express·2025
Same author

Simultaneous portosystemic shunt and proximal splenic artery embolization for patients with therapy-refractory hepatic encephalopathy at risk of portal hypertensive complications.

Acta gastro-enterologica Belgica·2025
Same author

GW250114: Testing Hawking's Area Law and the Kerr Nature of Black Holes.

Physical review letters·2025
Same author

Author Correction: Deterministic and reconfigurable graph state generation with a single solid-state quantum emitter.

Nature communications·2025

Related Experiment Video

Updated: May 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K

Polariton-generated intensity squeezing in semiconductor micropillars.

T Boulier1, M Bamba2, A Amo3

  • 1Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure and CNRS, UPMC Case 74, 4 place Jussieu, 75252 Paris Cedex 05, France.

Nature Communications
|February 13, 2014
PubMed
Summary

Researchers developed a new semiconductor source for squeezed light, essential for quantum information. Pillar microcavities achieved significant squeezing, outperforming planar designs for robust quantum technologies.

More Related Videos

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates
09:24

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates

Published on: July 2, 2012

14.5K
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
11:45

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

15.9K

Related Experiment Videos

Last Updated: May 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K
Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates
09:24

Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates

Published on: July 2, 2012

14.5K
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
11:45

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

15.9K

Area of Science:

  • Quantum optics
  • Semiconductor physics
  • Quantum information science

Background:

  • Squeezed and entangled light fields are fundamental for quantum information protocols.
  • Semiconductor microcavities offer potential for integrated quantum devices.

Purpose of the Study:

  • To demonstrate a novel source of continuous variable squeezed light using pillar-shaped semiconductor microcavities.
  • To investigate the generation of squeezing in the strong coupling regime within these devices.

Main Methods:

  • Utilizing degenerate polariton four-wave mixing by exciting pillar microcavities at normal incidence.
  • Analyzing the noise characteristics of the emitted light to quantify squeezing.
  • Comparing performance with planar microcavity designs.

Main Results:

  • Observed bistable behavior in the pillar microcavities.
  • Successfully generated squeezed light near the bistability turning point.
  • Achieved a measured intensity squeezing of 20.3%, with an inferred value of 35.8% after corrections.
  • Demonstrated enhanced squeezing compared to planar microcavities due to confined geometry and discrete energy levels.

Conclusions:

  • Pillar-shaped semiconductor microcavities represent a promising platform for generating continuous variable squeezed light.
  • The confined geometry offers advantages in noise protection, leading to improved squeezing performance.
  • This work advances the development of on-chip quantum devices for quantum information processing.