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Dip-coating deposition on chemically patterned surfaces: a mechanistic analysis and comparison with topographically
1Polymer Science and Engineering Department, University of Massachusetts , Amherst, Massachusetts 01003, United States.
Langmuir : the ACS Journal of Surfaces and Colloids
|February 18, 2014
Summary
Chemically patterned surfaces and superhydrophobic posts enable particle deposition via dip-coating. Key differences in capillary bridge failure and evaporation control offer distinct advantages for material patterning.
Area of Science:
- Materials Science
- Surface Chemistry
- Nanotechnology
Background:
- Chemically patterned surfaces with hydrophilic/hydrophobic regions facilitate particle deposition via dip-coating.
- Superhydrophobic surfaces with topographic features (posts) offer an alternative for dip-coating deposition.
Purpose of the Study:
- To compare dip-coating deposition using chemically patterned surfaces versus post-containing superhydrophobic surfaces.
- To analyze the distinct mechanisms of capillary bridge failure and solvent evaporation in both approaches.
Main Methods:
- Dip-coating deposition on chemically patterned and post-containing superhydrophobic surfaces.
- Analysis of receding three-phase contact line events.
- Investigation of solvent evaporation stages and contact angles.
Main Results:
- Chemically patterned surfaces exhibit sessile capillary bridge failure, while post-containing superhydrophobic surfaces show tensile failure.
- Solvent evaporation dynamics differ significantly, influenced by receding contact angles.
- Controlling solvent partial pressure is identified as a key variable for optimizing deposition on chemically patterned surfaces.
Conclusions:
- Significant differences exist in dip-coating deposition mechanisms between chemically patterned and superhydrophobic surfaces.
- Understanding capillary bridge failure and evaporation is crucial for controlling particle array formation.
- Chemically patterned surfaces offer tunable control over deposition processes through evaporation rate manipulation.

