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Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process
Optics Letters
|February 25, 2014
Summary
We developed new all-silicon photodetectors using CMOS technology. These devices offer high quantum efficiency and fast response for optical communication wavelengths.
Area of Science:
- Optoelectronics
- Silicon photonics
- Semiconductor devices
Background:
- Photodetectors are crucial for optical communication.
- Previous silicon photodetectors had limitations in efficiency and fabrication.
- Ring resonators offer enhanced light-matter interaction.
Purpose of the Study:
- To demonstrate a CMOS-compatible all-silicon photodetector.
- To improve upon existing silicon photodetector performance metrics.
- To enable cost-effective, integrated optical sensing solutions.
Main Methods:
- Fabrication of polycrystalline silicon ring resonators in a CMOS process.
- Utilizing sub-bandgap absorption in a p+/p/i/n/n+ diode structure.
- Characterization of photodetector performance at 1280 nm and 1550 nm.
Main Results:
- Achieved ~20% quantum efficiency at low reverse biases.
- Demonstrated few-gigahertz response bandwidths.
- Reported low dark currents (<50 pA at 10 V) and improved linearity.
- Significant enhancements over previous work in key performance areas.
Conclusions:
- Robust realization of a fully CMOS-fabricated all-silicon photodetector.
- Demonstrated feasibility of sub-bandgap absorption in silicon ring resonators for photodetection.
- Offers a promising solution for integrated silicon photonics and optical communication.
