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Related Concept Videos

Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
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Silicon-based silicon-germanium-tin heterostructure photonics.

Richard Soref1

  • 1Department of Physics and the Engineering Program, The University of Massachusetts at Boston, , 100 Morrissey Boulevard, Boston, MA 02125, USA.

Philosophical Transactions. Series A, Mathematical, Physical, and Engineering Sciences
|February 26, 2014
PubMed
Summary

Silicon-germanium-tin (SiGeSn) alloys enable new infrared photonic circuits operating from 1550 to 5000 nm. This research proposes heterostructure devices for integrated laser diodes, photodetectors, and more, paving the way for advanced optoelectronics.

Keywords:
communicationsgermaniumintegrated photonicsmid-infrared devicesopto-electronicssilicon

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Photonics

Background:

  • Silicon photonics is limited to shorter wavelengths.
  • A new operational regime from 1550 to 5000 nm is emerging.
  • Ternary SiGeSn alloys offer potential for infrared applications.

Purpose of the Study:

  • To propose heterostructure active devices using SiGeSn alloys for mid-infrared applications.
  • To describe foundry-based monolithic integration of these devices.
  • To explore opportunities and challenges in developing SiGeSn-based optoelectronics.

Main Methods:

  • Device design using ternary SiGeSn alloys.
  • Exploration of foundry-based monolithic integration techniques.
  • Analysis of potential applications in the 1550-5000 nm wavelength range.

Main Results:

  • Proposal of SiGeSn heterostructure active devices.
  • Description of monolithic integration strategies.
  • Identification of key components like laser diodes, photodetectors, and modulators.

Conclusions:

  • SiGeSn alloys are crucial for realizing Si-based integrated circuits in the mid-infrared spectrum.
  • Monolithic integration offers a viable path for manufacturing these advanced optoelectronic devices.
  • Significant opportunities exist for high-performance infrared waveguided components.