Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
Characteristics of MOSFET01:17

Characteristics of MOSFET

1.4K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.4K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
MOSFET01:16

MOSFET

1.8K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.8K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Highlighting strain rate dependent vibrational behavior of electrospun bundles for tendon/ligament and enthesis fascicle tissue regeneration.

Biomaterials advances·2026
Same author

<i>In vitro</i> and <i>in vivo</i> characterization of novel magnesium alloy implants enhanced by hydrothermal and sol-gel treatments for bone regeneration.

Journal of materials chemistry. B·2025
Same author

Generation and Tuning of Semiconductor Electronic and Functional Properties through Electrochemical Patterning.

Accounts of materials research·2025
Same author

On the Interplay Between Roughness and Elastic Modulus at the Nanoscale: A Methodology Study with Bone as Model Material.

Journal of functional biomaterials·2025
Same author

Surface Charge Overrides Protein Corona Formation in Determining the Cytotoxicity, Cellular Uptake, and Biodistribution of Silver Nanoparticles.

ACS applied bio materials·2025
Same author

Enhanced Bioactivity of Cu-Doped Bioactive Glass Coatings on Human Freeze-Dried Cortical Bone: An In Vitro Study.

Bioengineering (Basel, Switzerland)·2025

Related Experiment Video

Updated: May 2, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K

Tunnel conductivity switching in a single nanoparticle-based nano floating gate memory.

Alessandro Gambardella1, Mirko Prezioso2, Massimiliano Cavallini1

  • 1Consiglio Nazionale delle Ricerche-Istituto per lo studio dei Materiali Nanostrutturati (CNR- ISMN), via P. Gobetti 101, 40129 Bologna, Italy.

Scientific Reports
|February 27, 2014
PubMed
Summary

Researchers observed reversible switching in tunnel conductivity using nanoparticles (NPs) in a TiO2 matrix. This localized effect, confined to single NPs, enhances conductivity by over tenfold, offering insights into resistive switching mechanisms.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

3.2K

Related Experiment Videos

Last Updated: May 2, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

18.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

3.2K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Nanoparticles (NPs) are crucial in memristors and flash memory devices.
  • The influence of isolated NPs near interfaces on device performance remains unclear.

Purpose of the Study:

  • To investigate the role of NP proximity to the interface in resistive switching.
  • To observe and understand the local switching behavior of isolated NPs.

Main Methods:

  • Utilized scanning tunneling microscopy (STM) to apply voltage pulses to NPs embedded in a TiO2 matrix.
  • Analyzed the resulting changes in local tunnel conductivity.

Main Results:

  • Achieved reversible local switching in tunnel conductivity by applying voltage pulses to NPs.
  • Observed resistive switching spatially confined to the size of individual NPs.
  • Demonstrated a conductivity increase of over one order of magnitude.

Conclusions:

  • NPs act as nano-floating gates, inducing band bending and facilitating charge tunneling.
  • Formation and redistribution of oxygen vacancies near charged NPs contribute to switching.
  • This study elucidates resistive switching mechanisms at the single NP level.