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Large-Chern-number quantum anomalous Hall effect in thin-film topological crystalline insulators
Chen Fang1, Matthew J Gilbert2, B Andrei Bernevig3
1Department of Physics, University of Illinois, Urbana, Illinois 61801-3080, USA and Department of Physics, Princeton University, Princeton, New Jersey 08544, USA and Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, USA.
Abstract:
We theoretically predict that thin-film topological crystalline insulators can host various quantum anomalous Hall phases when doped by ferromagnetically ordered dopants. Any Chern number between ±4 can, in principle, be reached as a result of the interplay between (a) the induced Zeeman field, depending on the magnetic doping concentration, (b) the structural distortion, either intrinsic or induced by a piezoelectric material through the proximity effect, and (c) the thickness of the thin film. We propose a heterostructure to realize quantum anomalous Hall phases with Chern numbers that can be tuned by electric fields.
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