Related Experiment Video
Updated: May 2, 2026
06:24
High-Contrast and Fast Photorheological Switching of a Twist-Bend Nematic Liquid Crystal
Published on: October 31, 2019
5.7K
Ultrafast Stark-induced polaritonic switches
E Cancellieri1, A Hayat2, A M Steinberg3
1Laboratoire Kastler Brossel, Université Pierre et Marie Curie, Ecole Normale Supérieure et CNRS, Paris 75005, France and University of Sheffield, Sheffield S37RH, United Kingdom.
Physical Review Letters
|March 4, 2014
Summary
Ultrafast all-optical control of polariton populations in semiconductor microcavities is demonstrated. A Stark field tunes polariton branches, enabling rapid optical switching for advanced photonic devices.
Area of Science:
- Quantum optics
- Semiconductor physics
- Materials science
Background:
- Polaritons in semiconductor microcavities exhibit unique optical properties.
- Laser-induced shifts in polariton branches have been observed.
- All-optical control of quantum systems is a key research area.
Purpose of the Study:
- To demonstrate ultrafast all-optical control of polariton populations.
- To investigate the use of Stark fields for polariton branch manipulation.
- To explore the potential for high-repetition-rate optical switching.
Main Methods:
- Utilizing a red-detuned laser pulse to shift polariton branches.
- Employing a Stark field to tune the lower polariton branch into or out of resonance.
- Coupling with a continuous-wave laser for polariton injection control.
Main Results:
- Achieved nearly instantaneous and rigid shifts of lower and upper polariton branches.
- Demonstrated effective control over polariton population injection.
- Showcased the feasibility of implementing optical switches with high repetition rates.
Conclusions:
- Ultrafast all-optical control of semiconductor microcavity polaritons is achievable.
- Stark field modulation offers a precise method for polariton manipulation.
- The proposed technique holds promise for next-generation optical switching technologies.
More Related Videos
Related Concept Videos
01:27Schottky Barrier Diode
1.4K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.4K
01:31Dielectric Polarization in a Capacitor
5.5K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.5K
01:22MOSFET: Enhancement Mode
1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
01:16Biasing of P-N Junction
2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
01:28Induced Electric Dipoles
4.0K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.0K
01:15Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)
1.2K
Insensitive Nuclei Enhanced by Polarization Transfer (INEPT) is an advanced Nuclear Magnetic Resonance (NMR) technique specifically designed to detect and enhance the signals of low-abundance nuclei, such as carbon-13 and nitrogen-15, in small molecules. The fundamental principle behind INEPT is the transfer of polarization from a more abundant and highly polarizable nucleus, typically hydrogen-1, to the low-abundance nucleus of interest. This process effectively boosts the NMR signal of the...
1.2K