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Updated: May 2, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Filter-free image sensor pixels comprising silicon nanowires with selective color absorption
Hyunsung Park1, Yaping Dan, Kwanyong Seo
1School of Engineering and Applied Sciences, Harvard University , 33 Oxford Street, Cambridge, Massachusetts 02138, United States.
Abstract:
The organic dye filters of conventional color image sensors achieve the red/green/blue response needed for color imaging, but have disadvantages related to durability, low absorption coefficient, and fabrication complexity. Here, we report a new paradigm for color imaging based on all-silicon nanowire devices and no filters. We fabricate pixels consisting of vertical silicon nanowires with integrated photodetectors, demonstrate that their spectral sensitivities are governed by nanowire radius, and perform color imaging. Our approach is conceptually different from filter-based methods, as absorbed light is converted to photocurrent, ultimately presenting the opportunity for very high photon efficiency.
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