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Effects of roughness and temperature on low-energy hydrogen positive and negative ion reflection from silicon and
N Tanaka1, S Kato2, T Miyamoto2
1Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871, Japan.
Abstract:
Angle-resolved energy distribution functions of positive and negative hydrogen ions produced from a rough-finished Si surface under 1 keV proton irradiation have been measured. The corresponding distribution from a crystalline surface and a carbon surface are also measured for comparison. Intensities of positive and negative ions from the rough-finished Si are substantially smaller than those from crystalline Si. The angular distributions of these species are broader for rough surface than the crystalline surface. No significant temperature dependence for positive and negative ion intensities is observed for all samples in the temperature range from 300 to 400 K.
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