Rotated domain network in graphene on cubic-SiC(001)

Alexander N Chaika1, Olga V Molodtsova, Alexei A Zakharov

  • 1Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow District, 2 Academician Ossipyan str., 142432, Russian Federation. Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College Dublin, Dublin 2, Ireland.

Nanotechnology
|March 6, 2014
PubMed
Summary

This study reveals how atomic structure influences graphene synthesis on silicon carbide (SiC). Understanding this relationship is key for optimizing large-scale graphene production on SiC wafers.

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