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Updated: May 2, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Replacing Ag(TS)SCH(2)-R with Ag(TS)O(2)C-R in EGaIn-based tunneling junctions does not significantly change rates of
Kung-Ching Liao1, Hyo Jae Yoon, Carleen M Bowers
1Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, MA 02138 (USA).
Abstract:
This paper compares rates of charge transport by tunneling across junctions with the structures Ag(TS) X(CH2 )2n CH3 //Ga2 O3 /EGaIn (n=1-8 and X= SCH2 and O2 C); here Ag(TS) is template-stripped silver, and EGaIn is the eutectic alloy of gallium and indium. Its objective was to compare the tunneling decay coefficient (β, Å(-1) ) and the injection current (J0 , A cm(-2) ) of the junctions comprising SAMs of n-alkanethiolates and n-alkanoates. Replacing Ag(TS) SCH2 -R with Ag(TS) O2 C-R (R=alkyl chains) had no significant influence on J0 (ca. 3×10(3) A cm(-2) ) or β (0.75-0.79 Å(-1) )-an indication that such changes (both structural and electronic) in the Ag(TS) XR interface do not influence the rate of charge transport. A comparison of junctions comprising oligo(phenylene)carboxylates and n-alkanoates showed, as expected, that β for aliphatic (0.79 Å(-1) ) and aromatic (0.60 Å(-1) ) SAMs differed significantly.
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